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| SHINDENGEN Schottky Rectifiers (SBD) Dual DF20SC9M 90V 20A FEATURES *oe SMT OUTLINE DIMENSIONS Case : STO-220 Unit : mm *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z VRM Maximum Reverse Voltage 90 V Repetitive Peak Surge ReverseVRRSM Voltage Pulse width 0.5ms, duty 1/40 100 V IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=111*Z 20 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 *Z A 200 Repetitive Peak Surge ReversePRRSM Power Pulse width 10Es, Rating of per diode, Tj=25*Z 660 W *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =10A, Pulse measurement, Rating of per diode F Max.0.75 V IR V =V , Reverse Current R RM Pulse measurement, Rating of per diode Max.10 mA Junction Capacitance Cj f=1MHz,R V =10V, Rating of per diode Typ.370 pF Thermal Resistance AEjc junction to case Max.1.6 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF20SC9M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.5 1 1.5 2 2.5 Forward Voltage VF [V] DF20SC9M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 1 10 100 Reverse Voltage VR [V] DF20SC9M 10000 Reverse Current 1000 Tc=150C [MAX] Tc=150C [TYP] Reverse Current IR [mA] 100 Tc=125C [TYP] Tc=100C [TYP] 10 Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 20 40 60 80 100 Reverse Voltage VR [V] DF20SC9M 100 Reverse Power Dissipation Reverse Power Dissipation PR [W] 80 DC D=0.05 0.1 0.2 60 0.3 40 0.5 20 SIN 0.8 0 0 20 40 60 80 100 120 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DF20SC9M 30 Forward Power Dissipation Forward Power Dissipation PF [W] 25 0.5 D=0.8 SIN DC 20 0.2 0.1 15 0.05 0.3 10 5 0 0 5 10 15 20 25 30 35 Average Rectified Forward Current IO [A] Tj = 150C 0 IO tp D=tp /T T DF20SC9M 40 Derating Curve Average Rectified Forward Current IO [A] 35 DC 30 D=0.8 25 20 0.5 SIN 0.3 15 0.2 10 5 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 45V 0 0 IO VR tp D=tp /T T DF20SC9M 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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